ksc1815 npn epitaxial silicon transistor audio frequency amplifier high frequency osc complement to ksc1815 collector-base voltage v cbo = -50v absolute maximum ratings (t a =25 c) electrical characteristics (t a =25 c) h fe 1 classification characteristic symbol rating unit collector-base voltage collector-emitter voltage emitter-base voltage collector current base current collector dissipation junction temperature storage temperature v cbo v ceo v ebo i c i b p c t j t stg 60 50 5 150 50 400 125 -55 ~ 150 v v v ma ma mw c c characteristic symbol test conditions min typ max unit collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage base emitter saturation voltage current gain-bandwidth product output capacitance noise figure i cbo i ebo h fe 1 h fe 2 v ce (sat) v be (sat) f t c ob nf v cb =60v, i e =0 v eb =5v, i c =0 v ce =6v, i c =2ma v ce =6v, i c =150ma i c =100ma, i b =10ma i c =100ma, i b =10ma v ce =10v, i c =1ma v cb =10v, i e =0,f=1mhz v ce =6v, i c =0.1ma r g =10k w ,f=1hz 70 25 80 0.1 2.0 1.0 0.1 0.1 700 0.25 1.0 3.0 1.0 m a m a v v mhz pf db classification o y g l h fe1 70~140 120~240 200~400 350~700 to-92 1. emitter 2. base 3. collector ? 1999 fairchild semiconductor corporation rev. b
ksc1815 npn epitaxial silicon transistor
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